High density memory and double word ferroelectric memory cell fo

Details High density memory and double word ferroelectric memory cell fo High density memory and double word ferroelectric memory cell fo

1996-01-26

1998-08-04

Monin, Donald

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

365145, H01L 29792

Patent

active

057897751

ABSTRACT:
A high density non-volatile ferroelectric-based memory based on a ferroelectric FET operated in a two terminal write mode. Storage words may be constructed either from one or two bit storage cells based on a ferroelectric FET. A memory using either the one or two bit storage cells includes a plurality of word storage cells organized into a rectangular array including a plurality of columns and rows. Each of the word storage cells includes N single bit memory cells. Each of the single bit memory cells includes a pass transistor and a ferroelectric storage element. All of the gate electrodes in the circuit are connected to a common gate electrode, and all of the source electrodes are connected to a common source electrode. If the memory is built from two bit storage cells as described herein, each storage cell is one half of a two bit storage cell. All of the common source electrodes in each one of the columns are connected electrically to a column electrode corresponding to that column and all of the pass gates in each of the rows are connected electrically to a row electrode corresponding to that row. A memory address includes a plurality of bits divided into first and second groups of bits. The column and row electrodes are selected by the first and second groups of bits, respectively.

REFERENCES:
patent: 5412596 (1995-05-01), Hoshiba
patent: 5471417 (1995-11-01), Krautschneider et al.
patent: 5508954 (1996-04-01), Mihara et al.
patent: 5546352 (1996-08-01), Nakane et al.
patent: 5654568 (1997-08-01), Nakao

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