High density magnetoresistive random access memory device and op

Details High density magnetoresistive random access memory device and op High density magnetoresistive random access memory device and op

1997-12-24

1998-12-22

Mai, Son

Static information storage and retrieval

Systems using particular element

Magnetoresistive

365171, 365173, G11C 1100

Patent

active

058525742

ABSTRACT:
A high density magnetoresistive random access memory (MRAM) device is provided. The MRAM device includes a plurality of magnetic memory cells which employ a giant magnetoresistive effect to read and write states. The magnetic memory cells are divided into groups as memory units. The memory unit is activated by row and column signals provided by row and column decodes, respectively. Then, sense and word currents is applied to a target magnetic memory cell.

REFERENCES:
patent: 4829476 (1989-05-01), Dupuis
patent: 5587943 (1996-12-01), Torok
patent: 5699293 (1997-12-01), Tehrani
patent: 5745406 (1998-04-01), Yamane

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