Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Patent
1995-12-27
1999-12-14
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
257686, 257741, 257746, 257777, H01L 2348, H01L 2302
Patent
active
060021772
ABSTRACT:
Chip stacks with decreased conductor length and improved noise immunity are formed by laser drilling of individual chips, such as memory chips, preferably near but within the periphery thereof, and forming conductors therethrough, preferably by metallization or filling with conductive paste which may be stabilized by transient liquid phase (TLP) processes and preferably with or during metallization of conductive pads, possibly including connector patterns on both sides of at least some of the chips in the stack. At least some of the chips in the stack then have electrical and mechanical connections made therebetween, preferably with electroplated solder preforms consistent with TLP processes. The connections may be contained by a layer of resilient material surrounding the connections and which may be formed in-situ. High density circuit packages thus obtained may be mounted on a carrier by surface mount techniques or separable connectors such as a plug and socket arrangement. The carrier may be of the same material as the chip stacks to match coefficients of thermal expansion. High-density circuit packages may also be in the form of removable memory modules in generally planar or prism shaped form similar to a pen or as a thermal conduction module.
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Emerick Alan James
Gaynes Michael Anthony
Puligandla Viswanadham
Woychik Charles Gerard
Zalesinski Jerzy Maria
Chambliss Alonzo
Chaudhuri Olik
International Business Machines - Corporation
Kaschak Ron
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