Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip
Reexamination Certificate
2005-02-01
2005-02-01
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Flip chip
C257S738000, C257S773000, C257S795000, C257S787000, C257S780000, C257S783000
Reexamination Certificate
active
06849955
ABSTRACT:
The present invention relates to a structure of a high-density flip-chip integrated circuit package and a method for the same. At first, traces and a plural of solder pads are formed on a surface of a substrate simultaneously, wherein a height of the traces is as same as a height of the solder pads. Before adhering solder bumps of the chip to the solder pads, the solder bumps are dipped by using a flux at first and then the chip is connected to the substrate by using a underfill mode to avoid over-wetting defects in the reflow process. At last, the substrate and the chip are covered by using molding underfill to protect traces directly.
REFERENCES:
patent: 5194137 (1993-03-01), Moore et al.
patent: 5399898 (1995-03-01), Rostoker
patent: 6100596 (2000-08-01), Daly et al.
patent: 6140707 (2000-10-01), Plepys et al.
patent: 6507119 (2003-01-01), Huang et al.
patent: 6515360 (2003-02-01), Matsushima et al.
Ho Kwun Yao
Kung Moriss
Huynh Andy
Nath & Associates PL
Nelms David
Novick Harold L.
VIA Technologies Inc.
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