High density flash memory architecture with columnar...

Details High density flash memory architecture with columnar... High density flash memory architecture with columnar...

2005-03-08

2005-03-08

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S510000, C365S185170, C438S224000

Reexamination Certificate

active

06864530

ABSTRACT:
A flash memory device includes a substrate having first and second wells. The first well is defined within the second well. A plurality of trenches defines the substrate into a plurality of sub-columnar active regions. The trenches is formed within the first well and extends into the second well. A plurality of flash memory cells are formed on each of the sub-columnar active regions.

REFERENCES:
patent: 5834806 (1998-11-01), Lin et al.
patent: 6060742 (2000-05-01), Chi et al.
patent: 6121115 (2000-09-01), Joo et al.
patent: 6133098 (2000-10-01), Ogura et al.
patent: 6198658 (2001-03-01), Yoon et al.
patent: 6504763 (2003-01-01), Yang et al.

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