High density ferroelectric memory with increased channel modulat

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257314, 257352, 257368, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

057570426

ABSTRACT:
A memory based on a ferroelectric FET, the ferroelectric FET includes a gate electrode, a layer of ferroelectric material, layer of semiconducting material, a source electrode and a drain electrode. The layer of ferroelectric material is sandwiched between the gate electrode and the layer of semiconducting material, the source and drain electrodes being in contact with the layer of semiconducting material and spaced apart from one another. The memory includes a circuit for setting the ferroelectric FET to one of two states. The first state is set by applying a first voltage to the source and drain electrodes and a second voltage to the gate electrode. The second state is set by applying a third voltage to the gate and drain electrodes and fourth voltage to the source electrode. This arrangement reduces the number of pass transistors needed per ferroelectric FET to one plus a simple pulsing circuit that must be included with each word of memory.

REFERENCES:
patent: 3832700 (1974-08-01), Wu et al.
patent: 4161038 (1979-07-01), Wu
patent: 5307305 (1994-04-01), Takasu
patent: 5373462 (1994-12-01), Achard et al.
patent: 5412596 (1995-05-01), Hoshiba
patent: 5418389 (1995-05-01), Watanabe
patent: 5449935 (1995-09-01), Nakamura
patent: 5519812 (1996-05-01), Ishihara
patent: 5548475 (1996-08-01), Ushikubo et al.
patent: 5563081 (1996-10-01), Ozawa
patent: 5572052 (1996-11-01), Kashihara et al.
patent: 5578845 (1996-11-01), Masuda et al.
patent: 5621681 (1997-04-01), Moon
patent: 5623439 (1997-04-01), Gotoh et al.

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