High density EPROM fabricaiton method having sidewall floating g

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437 44, 437 49, 437195, H01L 2144

Patent

active

051438607

ABSTRACT:
An EPROM memory having sidewall floating gates (30) is disclosed. Sidewall floating gates (30) are formed on sidewalls (28) of field insulators (24). Spaced apart bit lines (22), which serve as memory cell sources and drains, are formed. The field insulators (24) overlie the bit lines (22), and sidewall floating gates are formed on the sidewalls (28) of the field insulators (24). In one embodiment, a second set of bit lines (36) is formed between the sidewall floating gates (30), and each memory cell contains one sidewall floating gate (30). In another embodiment, each memory cell contains two sidewall floating gate (30), and the memory cell may be programmed to store from two to four distinct information states.

REFERENCES:
patent: 4358340 (1982-11-01), Fu
patent: 4405995 (1983-09-01), Shirai et al.
patent: 4419809 (1983-12-01), Riseman et al.
patent: 4442589 (1984-04-01), Doo et al.
patent: 4698900 (1987-10-01), Esquivel
patent: 4729966 (1988-03-01), Koshino et al.
patent: 4734887 (1988-03-01), Sugatani
patent: 4794565 (1988-12-01), Wu et al.
patent: 4833514 (1989-05-01), Esquivel et al.
patent: 4997781 (1991-03-01), Tigelaar

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High density EPROM fabricaiton method having sidewall floating g does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High density EPROM fabricaiton method having sidewall floating g, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High density EPROM fabricaiton method having sidewall floating g will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-767537

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.