Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-10-26
1999-04-13
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257315, 257384, 257390, H01L 29788
Patent
active
058941622
ABSTRACT:
An EPROM disclosed in this specification includes a unique floating gate memory cell which may be charged using a reduced voltage level. The memory cells are fabricated using a mask to define the buried source, drain, and field oxide regions of the memory cell. After removal of the mask, field oxide regions are formed and a floating gate is fabricated which extends beyond the boundaries of the channel region for the floating gate field effect transistor memory cell. This extended floating gate provides additional capacitive coupling between the gate/word line and the floating gate while maintaining the same capacitive coupling between the floating gate and the channel of the floating gate field effect transistor memory cell. One embodiment discloses a silicide which is applied to the buried source and drain regions. The silicide is fabricated by forming a slot through the field oxide, forming a silicide on the diffused regions, refilling the slot with an oxide, and planarizing the resulting structure.
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Armstrong Gregory James
Paterson James L.
Donaldson Richard L.
Hoel Carlton H.
Ngo Ngan V.
Texas Instruments Incorporated
Valetti Mark A.
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