High density dynamic RAM with trench capacitor

Details High density dynamic RAM with trench capacitor High density dynamic RAM with trench capacitor

1991-08-27

1992-12-08

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257389, H01L 2968, H01L 2702, H01L 2934

Patent

active

051702347

ABSTRACT:
A dynamic one-transistor read/write memory cell employs a trench capacitor to increase the magnitude of the stored charge. The trench is etched into the silicon surface at a diffused N+ capacitor region similar in structure to the N+ bit line, then thick oxide is grown over the bit line and over the capacitor region, but not in the trench. The upper plate of the capacitor is a polysilicon layer extending into the trench and also forming field plate isolation over the face of the silicon bar. A word line forms the gate of the access transistor at a hole in the polysilicon field plate.

REFERENCES:
patent: 4164751 (1979-08-01), Tasch
patent: 4319342 (1982-03-01), Scheuerlein
patent: 4353086 (1982-10-01), Jaccodine et al.
patent: 4397075 (1983-08-01), Fatula et al.

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