High density DRAM with reduced peripheral device area and...

Details High density DRAM with reduced peripheral device area and... High density DRAM with reduced peripheral device area and...

2007-01-16

2007-01-16

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S275000, C438S631000, C438S508000, C438S508000

Reexamination Certificate

active

11003592

ABSTRACT:
A dynamic random access memory (DRAM) structure having a distance less than 0.14 um between the contacts to silicon and the gate conductor is disclosed. In addition a method for forming the structure is disclosed, which includes forming the DRAM array contacts and the contacts to silicon simultaneously.

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