High density DRAM with reduced peripheral device area and...

Details High density DRAM with reduced peripheral device area and... High density DRAM with reduced peripheral device area and...

2005-06-21

2005-06-21

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S508000

Reexamination Certificate

active

06909152

ABSTRACT:
A dynamic random access memory (DRAM) structure having a distance less than 0.14 μm between the contacts to silicon and the gate conductor is disclosed. In addition a method for forming the structure is disclosed, which includes forming the DRAM array contacts and the contacts to silicon simultaneously.

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Peter Van Zant; Microchip Fabrication : a practical guide to semiconductor processing; 2000; McGraw Hill, New York; 4th edition; pp. 154-156, 391-392.

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