Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-08-12
1999-10-05
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257372, 257390, 257394, 257926, 365104, 365105, 365175, 365177, H01L 2940, H01L 2941
Patent
active
059629002
ABSTRACT:
A read-only memory (ROM) device of the type including an array of diode-based memory cells for permanent storage of binary-coded data. The ROM device is partitioned into a memory division and an output division. The memory cells are formed over an insulating layer in the memory division. The insulating layer separates the memory cells from the underlying substrate such that the leakage current that can otherwise occur therebetween can be prevented. Moreover, the coding process is performing by forming contact windows at selected locations rather than by performing ion-implantation as in conventional methods. The fabrication process is thus easy to perform. Since the memory cells are diode-based rather than MOSFET-based, the punch-through effect that usually occurs in MOSFET-based memory cells can be prevented. The diode-based structure also allows the packing density of the memory cells on the ROM device to be dependent on the line width of the polysilicon layers in the ROM device. The feature size of the ROM device is thus dependent on the capability of the photolithographic process. The integration of the ROM device is thus high. The output division includes a plurality of MOSFETs whose gates are coupled to the memory cells in such a manner that the binary data can be read out by detecting the currents in the source/drain regions of these MOSFETs.
REFERENCES:
patent: 4384345 (1983-05-01), Mikome
patent: 4390971 (1983-06-01), Kuo
patent: 5600171 (1997-02-01), Mikahara et al.
Chou Jih-Wen
Wen Jemmy
Mintel William
United Microelectronics Corporation
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