Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1995-04-28
1997-06-03
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
437183, 437204, 437209, 364491, 438106, H01L 2141
Patent
active
056354240
ABSTRACT:
Composite bond pad structure and geometry increases bond pad density and reduces lift-off problems. Bond pad density is increased by laying out certain non-square bond pads which are shaped, sized and oriented such that each bond pad closely conforms to the shape of the contact footprint made therewith by a bond wire or lead frame lead and aligns to the approach angle of the conductive line to which it is connected. Alternating, interleaved, complementary wedge-shaped bond pads are discussed. Bond pad liftoff is reduced by providing an upper bond pad, a lower bond pad and an insulating component between the upper and lower bond pads. At least one opening is provided through the insulating component, extending from the bottom bond pad to the upper bond pad. The at least one opening is aligned with a peripheral region of the bottom bond pad and is filled with conductive material.
REFERENCES:
patent: 5454905 (1995-10-01), Fogelson
Heim Dorothy A.
Rostoker Michael D.
LSI Logic Corporation
Nguyen Tuan H.
LandOfFree
High-density bond pad layout arrangements for semiconductor dies does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High-density bond pad layout arrangements for semiconductor dies, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-density bond pad layout arrangements for semiconductor dies will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-391268