Static information storage and retrieval – Systems using particular element – Semiconductive
Patent
1981-08-03
1985-05-07
Fears, Terrell W.
Static information storage and retrieval
Systems using particular element
Semiconductive
365105, G11C 1136
Patent
active
045162239
ABSTRACT:
A bipolar ROM having a polysilicon PN junction diode as the matrix element for each bit of storage, wherein the diode is constructed laterally to the associated word line of the array. The word line and diode are implanted with impurities, then metal is deposited on the exposed surfaces of the polysilicon and the structure undergoes a sintering process. A layer of oxide covers the structure and a metal bit line connection is made to the diode P-type section, while the word line and other section of the diode are N-type. P and N type regions may be interchanged, as the polarity of a bit line or word line is a function of drive and sense circuitry. This combination of structure and method allows the use of polysilicon because of the lower sheet resistance and higher speed. Also, the use of PN junction diodes is possible instead of a design requiring Schottky diodes or transistors as matrix elements.
REFERENCES:
patent: 3384879 (1968-05-01), Stahl et al.
patent: 3689900 (1972-09-01), Chen
patent: 4420820 (1983-12-01), Preedy
patent: 4424579 (1984-01-01), Roesner
Bachand Richard A.
Fears Terrell W.
Merrett N. Rhys
Sharp Melvin
Texas Instruments Incorporated
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