Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Reexamination Certificate
2008-04-18
2010-06-29
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
C365S156000, C365S202000
Reexamination Certificate
active
07746713
ABSTRACT:
A memory device includes a plurality of cells comprising CMOS structures. A non-strobed regenerative sense-amplifier (NSR-SA) is coupled to the cells and employs offset compensation and avoids strobe timing uncertainty to increase read-access speeds.
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Chandrakasan Anantha P.
Verma Naveen
Auduong Gene N.
Gauthier & Connors LLP
Massachusetts Institute of Technology
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