Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1989-05-12
1992-11-10
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
361 56, 361 91, 257355, 257357, 257409, H01L 2702
Patent
active
051628880
ABSTRACT:
A field effect transistor device formed on an integrated circuit chip substrate and driven by the on-chip voltages having a well region formed in the substrate, and source and drain regions one of which is formed in the well region. The well region has a lower doping concentration than the source and drain regions and is of the same conductivity type. The well region provides a reduced electric field gradient at the source/substrate or drain/substrate junction and significantly increases the breakdown resistance of the device to DC voltages higher than the on-chip voltages. An input/output protection circuit employing the field effect transistor coupled in series between an integrated circuit output pad and the active devices on the chip providing ability to withstand coupling of the pad to a relatively high DC voltages.
REFERENCES:
patent: 4334235 (1982-06-01), Nishizawa
patent: 4577391 (1986-03-01), Hsia et al.
patent: 4609929 (1986-09-01), Jayaraman et al.
patent: 4694313 (1987-09-01), Beasom
patent: 4795716 (1989-01-01), Yilmaz et al.
patent: 4823173 (1989-04-01), Beasom
patent: 4928156 (1990-05-01), Alvis et al.
patent: 4928159 (1990-05-01), Mihara et al.
patent: 4929991 (1990-05-01), Blanchard
patent: 4933730 (1990-06-01), Shirato
patent: 4949136 (1990-08-01), Jain
patent: 4952994 (1990-08-01), Lin
patent: 5017985 (1991-05-01), Lin
patent: 5051860 (1991-09-01), Lee et al.
N. H. E. Weste et al., "Principles of CMOS VLSI Design", pp. 224-231, Addison-Wesley Publishing Company.
D. E. Nelsen et al., "Design and Test Results for a Robust CMOS VLSI Input Protection Network", EOS/ESD Symposium Proc., 1986.
Co Ramon
Liang Jui C.
Ouyang Kenneth W.
Hille Rolf
Tran Minhloan
Western Digital Corporation
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