Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2005-08-22
2011-10-18
Gebremariam, Samuel (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S738000, C257S780000
Reexamination Certificate
active
08039956
ABSTRACT:
A high current semiconductor device (for example QFN for 30 to 70 A) with low resistance and low inductance is encapsulated by molding compound (401, height402about 0.9 mm) so that the second lead surfaces110bremain un-encapsulated. A copper heat slug (404) may be attached to chip surface (101b) using thermally conductive adhesive (403). Chip surface (101a), protected by an overcoat (103) has metallization traces (102). Copper-filled windows (107) contact the traces and copper layers (105) parallel to traces (102). Copper bumps (108) are formed on each line in an orderly and repetitive arrangement so that the bumps of one line are positioned about midway between the bumps of the neighboring lines. A substrate has elongated leads (110) oriented at right angles to the lines; the leads connect the corresponding bumps of alternating lines.
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Coyle Anthony L.
Lange Bernhard P.
Brady III Wade J.
Gebremariam Samuel
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Tung Yingsheng
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