High current MOS transistor bridge structure

Details High current MOS transistor bridge structure High current MOS transistor bridge structure

1994-09-21

1995-09-12

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257338, 257343, H01L 2910

Patent

active

054499364

ABSTRACT:
A high current MOS transistor integrated bridge structure includes at least two arms, each having a first and a second MOS transistor. The structure is formed on an N++ substrate forming a positive potential output terminal, and an N-type epitaxial layer. For each first transistor, an L shaped region is formed of a horizontal N+ region which is connected to the surface through an N++ vertical region. Forming a corresponding alternating current input with this region is an N type region which has within it a succession of P type regions, and a pair of N+ type regions forming a negative potential output terminal. For each second transistor, an N+ region has N++ lateral regions extending to the surface, and includes an N type region containing a succession of P type regions and a pair of N+ regions forming corresponding alternating current inputs. The first transistor of each arm is entirely contained within a P type isolation region which has P+ regions extending to the surface of the substrate.

REFERENCES:
patent: 4535203 (1985-08-01), Jenkins et al.
patent: 4823065 (1989-04-01), Gousset
patent: 4866556 (1989-09-01), Hebenstreit
patent: 4949142 (1990-08-01), Contiero et al.
patent: 5045900 (1991-09-01), Tamagawa
patent: 5053838 (1991-10-01), Fujihira et al.
Technical Digest, International Electron Devices Meeting 1987 Washington, D.C., pp. 766-769.

Affiliated with

Also associated with

Rating

High current MOS transistor bridge structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High current MOS transistor bridge structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High current MOS transistor bridge structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-407367