High current ion implanter

Details High current ion implanter High current ion implanter

1979-01-08

1981-03-03

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 3700

Patent

active

042543401

ABSTRACT:
High current ion implanter of the type comprising, in a vacuum enclosure, an ion source, means for extracting these ions, scanning means and a sample-carrying target, wherein the scanning means are of the electrostatic type and comprise deflecting plates connected to a sawtooth-variable voltage source and wherein a regulatable magnetic refocussing means are disposed in the vicinity of said plates.
A particular application of the invention is to the construction of ion implanters intended for use in the manufacture of semiconductors.

REFERENCES:
patent: 3202817 (1965-08-01), Belbeoch
patent: 3997846 (1976-12-01), Coultas et al.
patent: 4013891 (1977-03-01), Ko et al.
patent: 4035655 (1977-07-01), Guermet et al.
patent: 4063098 (1977-12-01), Enge
patent: 4075488 (1978-12-01), Okayama et al.
patent: 4155011 (1979-05-01), Mark

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