High-current, high-voltage semiconductor devices having a metall

Details High-current, high-voltage semiconductor devices having a metall High-current, high-voltage semiconductor devices having a metall

1980-07-07

1983-05-10

Edlow, Martin H.

357 30, 357 63, H01L 2972, H01L 2714, H01L 29167

Patent

active

043832687

ABSTRACT:
A high-current, high-voltage semiconductor device is fabricated on a metallurgical grade substrate of a first conductivity type by first growing an epitaxial layer of the first conductivity type on the substrate and then fabricating a semiconductor device thereon designed for high-current, high-voltage applications.

REFERENCES:
patent: 3648123 (1972-03-01), Ernick et al.
patent: 3660171 (1972-05-01), Tsuchimoto et al.
patent: 4124410 (1978-11-01), Kotval et al.
patent: 4249957 (1981-02-01), Koliwad et al.
T. Warabisako, T. Saitoh, H. Itoh, N. Nakamura and T. Tokuyama, "Polycrystalline solar cells on metallurigical-grade silicon substrates", Japanese Journal of Applied Physics, vol. 17 (1978) Supplement 17-1, pp. 309-314.

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