High current electron beam inspection

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

Reexamination Certificate

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C324S501000

Reexamination Certificate

active

07602197

ABSTRACT:
A method and apparatus for wafer inspection. The apparatus is capable of testing a sample having a first layer that is at least partly conductive and a second, dielectric layer formed over the first layer, following production of contact openings in the second layer, the apparatus includes: (i) an electron beam source adapted to direct a high current beam of charged particles to simultaneously irradiate a large number of contact openings at multiple locations distributed over an area of the sample; (ii) a current measuring device adapted to measure a specimen current flowing through the first layer in response to irradiation of the large number of contact openings at the multiple locations; and (iii) a controller adapted to provide an indication of the at least defective hole in response to the measurement.

REFERENCES:
patent: 6723987 (2004-04-01), Ishimoto
patent: 6768324 (2004-07-01), Yamada et al.
patent: 6787770 (2004-09-01), Kikuchi et al.
patent: 6809534 (2004-10-01), Yamada
patent: 6897440 (2005-05-01), Yamada
patent: 6946857 (2005-09-01), Yamada et al.
Applied Materials Israel, Ltd., International Search Report, PCT/us2004/018159, Nov. 11, 2004, 5pp.
Patent Abstracts of Japan, 2000174077, Jun. 23, 2000 1 pg.
Patent Abstracts of Japan, 2002083849, Mar. 22, 2002 1 pg.
An Inline Process Monitoring Method Using Electron Beam Induced Substrate Current, Yamada et al., 5 pp, Microelectronics Reliability, Jul. 27, 2000.

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