Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Patent
1994-08-15
2000-01-11
Hardy, David B.
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
438482, H07L 2102
Patent
active
060135654
ABSTRACT:
An ultra-thin highly electrically conductive material is prepared by depositing an amorphous material, substantially free of crystal growth-inducing nuclei and sites, onto a substrate. Deposition is preferably with a plasma deposition reactor, with semiconductor dopants introduced during deposition. Deposition time is preferably adjusted to create an amorphous film of a desired thickness, e.g., 200 .ANG.. After deposition, the amorphous film is annealed preferably with a rapid thermal annealing process for four minutes at 700.degree. C. The annealing triggers the creation of nuclei and subsequent large grain growth in the film, releases energy contained within the amorphous material, and helps drive crystallization and dopant activation. After annealing the material is completely crystallized, and contains large grains whose lateral dimensions can exceed the film thickness by a factor of fifty. Because the grain structure is large there are few grain boundaries to absorb dopants and carriers, and thus degrade electrical conductivity. Thin film material produced according to the present invention can exhibit conductivity 10.sup.10 times better than prior art materials at 200 .ANG. thickness. Such material is highly suitable in thin film semiconductor structures including buried gate memory devices, shallow emitter devices, as well as photovoltaic cells, X-ray and other radiation detectors. The disclosed annealing process will substantially improve conductivity of amorphous thin film materials, even if such materials are produced by methods other than deposition.
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Fonash Stephen J.
Kakkad Ramesh
Hardy David B.
Penn State Research Foundation
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