High concentration indium fluorine retrograde wells

Details High concentration indium fluorine retrograde wells High concentration indium fluorine retrograde wells

2006-10-31

2006-10-31

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C438S162000, C438S217000, C257S220000

Reexamination Certificate

active

07129533

ABSTRACT:
A method and apparatus to form a high-concentration, indium-fluorine retrograde well within a substrate. The indium-fluorine retrograde well includes an indium concentration greater than about 3E18/cm3.

REFERENCES:
patent: 5917219 (1999-06-01), Nandakumar et al.
patent: 6180468 (2001-01-01), Yu et al.
patent: 6194259 (2001-02-01), Nayak et al.
patent: 6372582 (2002-04-01), Rouse et al.
patent: 6534373 (2003-03-01), Yu
patent: 6610585 (2003-08-01), Brown et al.
patent: 2003/0008462 (2003-01-01), Horiuchi et al.
patent: 2004/0061187 (2004-04-01), Weber et al.
patent: 2005/0167673 (2005-08-01), Maegawa et al.

Affiliated with

Also associated with

Rating

High concentration indium fluorine retrograde wells does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High concentration indium fluorine retrograde wells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High concentration indium fluorine retrograde wells will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3685895