High capacity MRAM memory array architecture

Details High capacity MRAM memory array architecture High capacity MRAM memory array architecture

2005-03-29

2005-03-29

Yoha, Connie C. (Department: 2818)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000, C365S171000

Reexamination Certificate

active

06873547

ABSTRACT:
A magnetic memory is disclosed. The magnetic memory includes a first magnetic tunneling junction and a reference magnetic tunneling junction. The first magnetic tunneling junction includes a first ferromagnetic layer, a second ferromagnetic layer and a first insulating layer between the first ferromagnetic layer and the second ferromagnetic layer. The reference magnetic tunneling junction includes a third ferromagnetic layer, a fourth ferromagnetic layer and a second insulating layer between the third ferromagnetic layer and the fourth ferromagnetic layer. The magnetic memory also includes means for comparing a first output of the first magnetic tunneling junction with a reference output of the reference magnetic tunneling junction.

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Jeong, Won-Cheol, et al., “Three level, six state multilevel magnetoresistive RAM (MRAM),” Journal of Applied Physics, Apr. 1999 vol. 85, No. 8, pp. 4782-4784.

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