High capacity etching process

Details High capacity etching process High capacity etching process

1981-01-16

1982-04-20

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 204192E, C23C 1500

Patent

active

043257780

ABSTRACT:
A high-throughput apparatus is utilized in a process for sputter etching or reactive sputter etching of wafers. The apparatus comprises a large-area electrode centrally disposed within a relatively small-area cylindrical electrode. Wafers to be etched are mounted on the inside surface of the cylindrical electrode. A source of a-c power is capacitively coupled to the cylindrical electrode and the center electrode is grounded. By establishing a suitable plasma within the apparatus, simultaneous anisotropic etching of multiple wafers can be achieved.

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patent: 3644191 (1972-02-01), Matsushima
patent: 3707452 (1972-12-01), Wester el al.
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patent: 3971684 (1976-07-01), Muto
patent: 4230515 (1980-10-01), Zajac
patent: 4252626 (1981-02-01), Wright et al.
Mauer et al, "Mechanism . . . Plasma", J. Vac. Sci. Technology, vol. 15 (5), Sep./Oct. 1978, pp. 1734-1738.
George, "Cylindrical . . . Production", J. Vac. Sci. Technology, vol. 10 (2) Mar./Apr. 1973, pp. 393-399.
Schwatz, "Competitive . . . Plasma", J. of Electrochemical Society: Solid State Tech., vol. 126(3), Mar. 1979, pp. 464-469.

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