Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Metallic housing or support
Reexamination Certificate
2005-04-12
2005-04-12
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Metallic housing or support
Reexamination Certificate
active
06878572
ABSTRACT:
A high capacitance substrate. The substrate includes a core tolerant to sintering thereon of a high k material to provide increased capacitance. The core may be non-ceramic. The material sintered thereon may have a dielectric constant in excess of about 4. The substrate may be a package substrate electrically coupled to a die.
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Young, K.F. and Frederikse, H.P.R, J. Phys. Chem. Ref. Data, 2, 313, (1973), sect. 12, pp 48.
Dolan Jennifer M
Intel Corporation
Jr. Carl Whitehead
Ortiz Kathy J.
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