Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-08-12
2000-05-30
Whitehead, Jr., Carl
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257433, 257435, H01L 2348
Patent
active
06069405&
ABSTRACT:
A high capacitance mirror driver cell provides reduced photocurrent leakage and includes a metal 1 layer comprising integrated circuit elements and a metal 2 layer comprising additional integrated circuit elements, the metal 2 layer being positioned over and associated with send metal 1 layer. A metal 3 layer blocking light and forming a ground plane and a metal 4 mirror layer covering at least a portion of said dielectric material and said metal 3 layer for forming a capacitive element operating to substantially reduce the effects of photocurrent leakage.
REFERENCES:
patent: 4602850 (1986-07-01), DeBenedetti
patent: 5365355 (1994-11-01), Hastings, III et al.
patent: 5461501 (1995-10-01), Sato et al.
patent: 5499123 (1996-03-01), Mikoshioba
Jr. Carl Whitehead
Laks Joseph J.
Potter Roy
Sragow Daniel E.
Thomson Licensing S.A.
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