High capacitance capacitor manufacturing method

Details High capacitance capacitor manufacturing method High capacitance capacitor manufacturing method

1996-01-25

1997-04-22

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438398, 438738, H01L 2170

Patent

active

056228899

ABSTRACT:
A method for manufacturing a high capacitance capacitor having an HSG film formed on a stack-structured lower storage node, includes the step of forming insulating films for protecting the HSG film. In the present invention the lower storage node and the HSG film formed thereon are not damaged during an etch-back process. The HSG film formed on the lower storage node is protected by means of the insulating films, thereby preventing a decrease in capacitor capacitance.

REFERENCES:
patent: 5366917 (1994-11-01), Watanabe et al.
patent: 5447878 (1995-09-01), Park et al.
patent: 5486488 (1996-01-01), Kamiyama
Sakao, M., "A Capacitor-Over-Bit-Line (COB) Cell With A Hemispherical-Grain Storage Node for 64Mb DRAMs", IEDM 90-655, IEEE 1990, pp. 27.3.1-27.3.4.

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