Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1995-02-03
1996-12-17
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257 94, 257103, 257627, 372 45, 372 43, 437107, H01L 3300, H01L 29161, H01S 319
Patent
active
055856489
ABSTRACT:
A green-blue to ultraviolet light-emitting optical device, e.g. a green-blue to ultraviolet emitting laser or a green-blue to ultraviolet emitting diode, comprising a green-blue to ultraviolet light emitting gallium nitride material on a base structure including a silicon carbide substrate, which preferably consists of 2H-SiC, 4H-SiC, or a-axis oriented 6H-SiC. The carrier mobility and the transparency of the silicon carbide substrate are optimized by the selection of orientation and polytype, thus enhancing device performance. The light-emitting diodes may incorporate a structural modification to increase the light output comprising a dielectric Bragg mirror beneath the LED structure, made of alternating layers of AlN, GaN, InN or their alloys. Methods for making such light-emitting diodes are provided, including a technique for defining individual devices by mesa etching which avoids possible damage to the active area during dicing.
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Elliott Janet
Hultquist Steven
Monin, Jr. Donald L.
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