High breakdown voltage type semiconductor device

Details High breakdown voltage type semiconductor device High breakdown voltage type semiconductor device

1994-07-12

1995-06-27

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257336, 257347, H01L 2702

Patent

active

054282411

ABSTRACT:
In a high breakdown voltage type semiconductor device, width W2 of channel region 20 at a corner portion is made wider than width W1 of channel region 20 at a linear portion in a planar pattern of a gate electrode 9. Consequently, the device has high breakdown voltage when it is "OFF" and has low resistance when it is "ON".

REFERENCES:
"A Versatile 250/300-V IC Process For Analog And Switching Applications", Ludikhuize, IEEE Transaction on Electron Devices, vol. Eb-33, pp. 2008-2015.
"A Versatile 700-1200-V IC Process For Analog And Switching Applications", ludikhuize, IEEE Transaction on Electron Devices, vol. 38, pp. 1582-1589.
"Structure of 600V IC and A New Voltage Sensing Device", Terashima et al., Proceedings of the 5th International Symposium on Power Semiconductor Devices on ICs, ISPSD'93, pp.224-229.

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