High-breakdown-voltage semiconductor element

Details High-breakdown-voltage semiconductor element High-breakdown-voltage semiconductor element

1993-06-19

1994-06-21

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

H01L 2702, H01L 2910, H01L 2978

Patent

active

053230418

ABSTRACT:
In a high-breakdown-voltage diode, a high-concentration p-type layer is selectively formed in an n-type silicon layer, and a high-concentration n-type layer is formed in the same separate from the layer by a predetermined distance. An insulation film having a dielectric constant larger than silicon is formed on that portion of the n-type silicon layer which extends between the layers, for relaxing concentration of an electric field caused in the surface of the substrate.

REFERENCES:
patent: H665 (1989-08-01), Knolle et al.
patent: 3686544 (1972-08-01), Steigman et al.
patent: 4890150 (1989-12-01), Vera et al.
patent: 5086332 (1992-02-01), Nakagawa et al.
patent: 5204988 (1993-04-01), Sakurai
Patent Abstracts of Japan, vol. 14, No. 133 (E-902), Mar. 13, 1990, JP-2 001 980, Jan. 8, 1990.

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