High breakdown voltage semiconductor device and fabrication...

Details High breakdown voltage semiconductor device and fabrication... High breakdown voltage semiconductor device and fabrication...

2011-07-05

2011-07-05

Gebremariam, Samuel A (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S345000, C257S347000, C257S403000, C257S409000, C257S329000, C257S349000

Reexamination Certificate

active

07973361

ABSTRACT:
A high breakdown voltage semiconductor device is formed using an SOI substrate comprising a support substrate, an insulating film, and an active layer. The high breakdown voltage semiconductor device comprises an N-type well region and a P-type drain offset region formed on the active layer, a P-type source region formed on the well region, a P-type drain region formed on the drain offset region, a gate insulating film formed in at least a region interposed between the source region and the drain offset region of the active layer, and a gate electrode formed on the gate insulating film. The device further comprises an N-type deep well region formed under the drain offset region. A concentration peak of N-type impurity for formation of the deep well region is located deeper than a concentration peak of P-type impurity for formation of the drain offset region.

REFERENCES:
patent: 6380566 (2002-04-01), Matsudai et al.
patent: 6693339 (2004-02-01), Khemka et al.
patent: 6828631 (2004-12-01), Rumennik et al.
patent: 08-148684 (1996-06-01), None
patent: 2004-096083 (2004-03-01), None
Chinese Office Action, with English translation, issued in Chinese Patent Application No. 200610067980.2, mailed Mar. 27, 2009.

Affiliated with

Also associated with

Rating

High breakdown voltage semiconductor device and fabrication... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High breakdown voltage semiconductor device and fabrication..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High breakdown voltage semiconductor device and fabrication... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2730500