High breakdown voltage semiconductor device

Details High breakdown voltage semiconductor device High breakdown voltage semiconductor device

1993-07-02

1995-08-01

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

257506, H01L 2974

Patent

active

054382203

ABSTRACT:
A high breakdown voltage semiconductor device includes a semiconductor substrate, an insulating layer formed on the semiconductor substrate, an active layer formed on the insulating layer and made of a high resistance semiconductor of a first conductivity type, a first impurity region of the first conductivity type formed in the active layer, and a second impurity region of a second conductivity type formed in the active layer and spaced apart from the first impurity region by a predetermined distance. The first impurity region is formed of diffusion layers. The diffusion layers are superimposed one upon another and differ in diffusion depth or diffusion window width, or both.

REFERENCES:
patent: 4774560 (1988-09-01), Coe
patent: 4779125 (1988-10-01), Remmerie et al.
patent: 4873564 (1989-10-01), Beasom
patent: 5241210 (1993-08-01), Nakagawa et al.

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