High breakdown voltage semiconductor device

Details High breakdown voltage semiconductor device High breakdown voltage semiconductor device

1998-09-16

2000-12-19

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257330, 257332, 257343, 257347, 257378, H01L 2976, H01L 2994, H01L 31062, H01L 31113, H01L 31119

Patent

active

061630519

ABSTRACT:
A high breakdown voltage semiconductor device comprising a first base region of a first conductivity type, a second base region of a second conductivity type, which is formed in a surface region of the first base region, a first gate insulation film formed on an inner wall of a first LOCOS groove formed passing through the second base region to reach the first base region, a first gate electrode formed on the first gate insulation film, a first source region of a first conductivity type, which is formed in a surface region of the second base region around the first LOCOS groove in such a manner as to contact with the first gate insulating film, a first drain region formed in a surface region of the first base region in such a manner as to be spaced apart from the second base region, a source electrode formed on the first source region and on the second base region, and a drain electrode formed on the first drain region.

REFERENCES:
patent: 5321289 (1994-06-01), Baba et al.
patent: 5723891 (1998-03-01), Malhi
patent: 5910669 (1999-06-01), Chang et al.
patent: 5915180 (1999-06-01), Hara et al.
patent: 5929481 (1999-07-01), Hshieh et al.
patent: 5986304 (1999-11-01), Hshieh et al.

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