High breakdown voltage semiconductor device

Details High breakdown voltage semiconductor device High breakdown voltage semiconductor device

1998-03-18

2000-05-30

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

In integrated circuit

257493, 257341, 257355, 257500, H01L 2358

Patent

active

060693967

ABSTRACT:
The high breakdown voltage semiconductor device comprises an insulating film, a semi-insulating high resistance film formed on the insulating film, a first semiconductor layer of the first conductivity type formed on the high resistance film, a second semiconductor layer of the second conductivity type formed on a surface of the first semiconductor layer, a third semiconductor layer of the first conductivity type formed on the surface of the first semiconductor layer so as to be apart from the second semiconductor layer, and having an impurity concentration higher than that of the first semiconductor layer, and a resurf layer formed in a space between the second and third semiconductor layers on the surface of the first semiconductor layer, and having an impurity concentration lower than that of the second semiconductor layer.

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Akio Nakagawa, et al., "New High Voltage SOI Device Structure Eliminating Substrate Bias Effects," 1996 IEEE IEDM Tech. Digest, (1996), pp. 477-480.
Tatsuhiko Fujihara, et al., "Self-Shielding: New High-Voltage Inter-Connection Technique For HVICs," Proc. of '96 ISPSD,(1996), pp. 231-234.

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