High breakdown voltage semiconductor device

Details High breakdown voltage semiconductor device High breakdown voltage semiconductor device

1995-06-07

1997-01-07

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

257409, 257506, H01L 2358

Patent

active

055920144

ABSTRACT:
A high breakdown voltage semiconductor apparatus comprises a substrate having an insulating layer formed thereon, a high resistance semiconductor layer of a first conductivity type formed on said insulating layer, a base region of the first conductivity type formed selectively in a surface region of the high resistance semiconductor layer, a drift region of a second conductivity type formed selectively in the surface region of the high resistance semiconductor layer so as not to reach the insulating layer, a source region of the second conductivity type formed in the base region, a drain region formed in the drift region, a gate electrode formed on a region between the source region and the drift region, with a gate insulating film interposed between the gate electrode and the region between the source region and the drift region, a source electrode provided in contact with the base region and the source region, a drain electrode provided in contact with the drain region. The dosage of impurities in the high resistance semiconductor layer is 2.times.10.sup.12 cm.sup.-2 to 3.times.10.sup.12 cm.sup.-2 and the dosage of impurities in the drift layer is 1.times.10.sup.12 cm.sup.-2 to 2.times.10.sup.12 cm.sup.-2.

REFERENCES:
patent: 4807012 (1989-02-01), Bcasom
patent: 5072287 (1991-10-01), Nakagawa et al.

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