Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-09-20
1998-07-07
Wallace, Valencia Martin
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257339, 257408, 257506, H01L 2976, H01L 2994
Patent
active
057773718
ABSTRACT:
A high-breakdown-voltage semiconductor device includes a high-resistance semiconductor layer, a drift layer of the first conductivity type selectively formed in the surface of the high-resistance semiconductor layer, a drain layer formed in the surface of the drift layer of the first conductivity type, base layers of the second conductivity type selectively formed in the surface of the high-resistance semiconductor layer, a plurality of island-shaped source layers of the first conductivity type formed in the surfaces of the base layers of the second conductivity type, a gate electrode formed on the base layers of the second conductivity type between the source layers of the first conductivity type and the drift layer of the first conductivity type and between adjacent source layers of the first conductivity type via a gate insulating film, a drain electrode which contacts the drain layer, and source electrodes which contact both the source layers of the first conductivity type and the base layers of the second conductivity type.
REFERENCES:
patent: 4567502 (1986-01-01), Nakagawa et al.
patent: 4952991 (1990-08-01), Kayama
patent: 5477067 (1995-12-01), Isomura et al.
Taylor Efland, et al., "An Optimized Resurf LDMOS Power Device Module Compatible with Advanced Logic Processes", IEDM Technical Digest 1992, pp. 237-240.
Masakatsu Hoshi, et al., "Low On-Resistance LDMOSFETS with DSS (A Drain Window Surrounded by Source Windows) Pattern Layout", Proceedings of 1995 International Symposium on Power Semiconductor Devices & ICs, Yokohama, pp. 63-67, May 23, 1995.
Funaki Hideyuki
Kawaguchi Yusuke
Yamaguchi Yoshihiro
Kabushiki Kaisha Toshiba
Martin Wallace Valencia
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