High breakdown voltage semiconductor device

Details High breakdown voltage semiconductor device High breakdown voltage semiconductor device

1992-01-31

1994-08-30

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

257506, 257509, H01L 2974

Patent

active

053430670

ABSTRACT:
A high breakdown voltage semiconductor device comprising a semiconductor substrate an insulating layer formed on the semiconductor substrate, a high resistance semiconductor layer formed on the insulating layer, an isolation region formed in the high resistance semiconductor layer, an element region formed in the high resistance semiconductor layer isolated by the isolation region in a lateral direction, a first low resistance region of a first conductivity type formed in a central surface portion of the element region, and a second low resistance region of a second conductivity type formed in a peripheral surface portion of the element region. Dose of impurities in the element region is set such that a portion of the element region between the first low resistance region and the second low resistance region is completely depleted when voltage is applied between the first and second low resistance regions.

REFERENCES:
Patent Abstracts of Japan, vol. 12, No. 207 (E-621) (3054), Jun. 14, 1988, & JP-A-63-005-574, Jan. 11, 1988, W. Tomoshige, et al., "High Breakdown Strength Semiconductor Device".

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