High-breakdown-voltage semiconductor apparatus

Details High-breakdown-voltage semiconductor apparatus High-breakdown-voltage semiconductor apparatus

1998-03-17

2000-03-21

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257139, 257341, 257262, 257401, H01L 2976

Patent

active

060405988

ABSTRACT:
A high-breakdown-voltage semiconductor apparatus is provided, wherein when a gate capacitance of that portion of a gate electrode, under which a channel is formed, is Cg [F], a resistance in a channel length direction of that portion of the gate electrode, under which the channel is formed, is Rg [.OMEGA.], a threshold voltage, which is to be applied to the gate electrode and application of which permits flow of a drain current, is Vth [V], a voltage to be applied to the gate electrode to cut off the drain current is Voff [V], and a ratio of increase in the drain voltage per unit time at the time of cutting off the drain current is dV/dt [V/s], the following condition is satisfied:

REFERENCES:
patent: 5703383 (1997-12-01), Nakayama

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