High-bandwidth magnetoresistive random access memory devices...

Details High-bandwidth magnetoresistive random access memory devices... High-bandwidth magnetoresistive random access memory devices...

2006-10-17

2009-08-18

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S189070

Reexamination Certificate

active

07577017

ABSTRACT:
A method for accessing a memory cell of a magnetoresistive random access memory (MRAM) device, where the memory cell includes a plurality of memory units, includes writing the memory cell by identifying ones of the memory units having stored therein a datum different from a datum to be written thereto; and simultaneously writing all of the ones of the memory units. An MRAM device includes a plurality of write word lines, a plurality of write bit lines, and a plurality of memory cells. Each memory cell includes a plurality of memory units. Each memory unit includes a free magnetic region having one or more easy axes non-perpendicular to the write bit lines and non-perpendicular to the write word lines, a pinned magnetic region, and a tunneling barrier between the free magnetic region and the pinned magnetic region.

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Chien-Chung Hung et al., “A 6-F2Bit Cell Design Based on One Transistor and Two Uneven Magnetic Tunnel Junctions Structure and Low Power Design for MRAM,” IEEE Transactions on Electron Devices, vol. 53, No. 7, Jul. 2006, pp. 1530-1538.

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