High-bandwidth magnetoresistive random access memory devices

Details High-bandwidth magnetoresistive random access memory devices High-bandwidth magnetoresistive random access memory devices

2007-02-16

2008-12-09

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S131000, C365S173000

Reexamination Certificate

active

07463510

ABSTRACT:
A magnetoresistive random access memory (MRAM) device includes a memory cell corresponding to one read bit line, one read word line, one write word line, and two or more write bit lines. The memory cell includes a first memory unit and a second memory unit each corresponding to a respective write bit line. Each of the first and second memory units comprises: a free magnetic region having a first easy axis, a pinned magnetic region having a second easy axis, and a tunneling barrier between the free magnetic region and the pinned magnetic region.

REFERENCES:
patent: 6545906 (2003-04-01), Savtchenko et al.
patent: 6757189 (2004-06-01), Hung et al.
patent: 6791887 (2004-09-01), Hung et al.
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patent: 6909631 (2005-06-01), Durlam et al.
patent: 2007/0030727 (2007-02-01), Hung et al.
Chien-Chung Hung et al., A 6-F2Bit Cell Design Based on One Transistor and Two Uneven Magnetic Tunnel Junctions Structure and Low Power Design for MRAM.

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