High aspect ratio trench structures with void-free fill...

Details High aspect ratio trench structures with void-free fill... High aspect ratio trench structures with void-free fill...

2011-06-07

2011-06-07

Ha, Nathan W (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29262

Reexamination Certificate

active

07956411

ABSTRACT:
A field effect transistor (FET) includes a trench extending into a semiconductor region. A conductive electrode is disposed in the trench, and the conductive electrode is insulated from the semiconductor region by a dielectric layer. The conductive electrode includes a conductive liner lining the dielectric layer along opposite sidewalls of the trench. The conductive liner has tapered edges such that a thickness of the conductive liner gradually increases from a top surface of the conductive electrode to a point in lower half of the conductive electrode. The conductive electrode further includes a conductive fill material sandwiched by the conductive liner. The FET further includes a drift region of a first conductivity type in the semiconductor region, and a body region of a second conductivity type extending over the drift region. Source regions of the first conductivity type extend in the body region adjacent the trench.

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