Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2003-05-28
2008-12-16
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S468000
Reexamination Certificate
active
07465661
ABSTRACT:
A method of electroplating a metal into a plurality of channels within an insulating material includes mounting the material to a cathode; placing the cathode into an electroplating solution containing the metal; placing an anode into the electroplating solution; connecting the cathode and the anode to a power supply; controlling operation of the power supply to provide a beginning current density during deposition at the insulating material and initiating electroplating of the metal within the plurality of channels starting at one face of the insulating material; and controlling operation of the power supply to provide a final current density during deposition at the insulating material and ending electroplating of the metal within the plurality of channels at the other face of the insulating material. The final current density is larger than the beginning current density, and the beginning current density is maintained at a level for a sufficient time to substantially prevent bubble formation during the electroplating.
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Justus Brian
Merritt Charles
Karasek John J.
Legg L. George
Perkins Pamela E
Smith Zandra V.
The United States of America as represented by the Secretary of
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