High aspect ratio metallization structures and processes for fab

Details High aspect ratio metallization structures and processes for fab High aspect ratio metallization structures and processes for fab

1998-04-21

2000-09-19

Smith, Matthew

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438622, 438642, H01L 2144

Patent

active

061211346

ABSTRACT:
A contact interface having a substantially continuous profile along a bottom and lower sides of the active surface of the semiconductor substrate formed within a contact opening. The contact interface is formed by depositing a layer of conductive material, such as titanium, using both a high bias deposition and a low bias deposition. The high bias and low bias deposition may be effected as a two-step deposition or may be accomplished by changing the bias from a high level to a low level during deposition, or vice versa. The conductive material is converted to a silicide by an annealing process to form the contact interface.

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