High aspect ratio low resistivity lines/vias by surface diffusio

Details High aspect ratio low resistivity lines/vias by surface diffusio High aspect ratio low resistivity lines/vias by surface diffusio

1996-10-28

1999-04-27

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438637, 438668, 438687, 438688, H01L 2128

Patent

active

058973702

ABSTRACT:
A method of filling high aspect ratio vias and lines on the upper surface of a substrate prevents voids from being formed therein. The method comprises the steps of filling the lines and vias by surface diffusion at room temperature and at a pressure of 1 Torr. Step coverage of the fill material and sputtering parameters are chosen to satisfy a predetermined relationship. The upper surface of the substrate comprises regions of exposed aluminum, aluminum-copper or copper alloys. After filling the vias and lines, the exposed aluminum, aluminum-copper or copper alloys are reacted with a gas containing germanium to form a germanium alloy over the upper surface of the substrate.

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