High-aspect-ratio hollow diffused regions in a semiconductor bod

Details High-aspect-ratio hollow diffused regions in a semiconductor bod High-aspect-ratio hollow diffused regions in a semiconductor bod

1983-10-24

1986-02-11

Edlow, Martin H.

357 30, 357 32, 357 55, 357 88, H01L 2906

Patent

active

045701733

ABSTRACT:
A semiconductor device and a method for its preparation are disclosed, wherein a semiconductor body has at least one bore extending completely or partially therethrough, this bore being defined by a semiconducting region having a conductivity type opposite to, and resistivity lower than, the material of the body contiguous to the bore-defining semiconducting region, this bore having a substantially constant diameter of less than about 1.5 mils and an average length-to-diameter ratio of at least about 6:1.

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