High aspect ratio gapfill process by using HDP

Details High aspect ratio gapfill process by using HDP High aspect ratio gapfill process by using HDP

1997-06-17

1999-02-16

Niebling, John F.

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438732, H01C 71302

Patent

active

058720588

ABSTRACT:
A process for filling high aspect ratio gaps on substrates uses conventional high density plasma deposition processes while reducing the concentration of the inert gas, such as Ar, to 0-13% of the total process gas flow. By reducing the inert gas concentration, sputtering or etching is reduced, resulting in reduced sidewall deposition from the sputtered material. Consequently, gaps with aspect ratios of 3.0:1 and higher can be filled without the formation of voids and without damaging circuit elements.

REFERENCES:
patent: 5162261 (1992-11-01), Fuller et al.
patent: 5614055 (1997-03-01), Fairbairn et al.
patent: 5670421 (1997-09-01), Nishitani et al.
patent: 5691573 (1997-11-01), Avanzino et al.
patent: 5776834 (1998-07-01), Avanzino et al.

Affiliated with

Also associated with

Rating

High aspect ratio gapfill process by using HDP does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High aspect ratio gapfill process by using HDP, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High aspect ratio gapfill process by using HDP will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2062327