High aspect ratio contacts

Details High aspect ratio contacts High aspect ratio contacts

2006-02-21

2009-10-27

Alanko, Anita K (Department: 1792)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C438S668000, C438S700000, C438S714000, C438S723000, C438S734000

Reexamination Certificate

active

07608195

ABSTRACT:
A process for etching a insulating layer to produce an opening having an aspect ratio of at least 15:1 by supplying a first gaseous etchant having at least fifty (50) percent He to a plasma etch reactor, and exposing the insulating layer to a plasma of the first gaseous etchant. Use of the first gaseous etchant reduces the occurrence of twisting in openings in insulating layers having an aspect ratio of at least 15:1.

REFERENCES:
patent: 5320981 (1994-06-01), Blalock
patent: 5648640 (1997-07-01), Osborn
patent: 6191043 (2001-02-01), McReynolds
patent: 6228775 (2001-05-01), Coburn et al.
patent: 6242165 (2001-06-01), Vaartstra
patent: 6475920 (2002-11-01), Coburn et al.
patent: 6506674 (2003-01-01), Ikeda et al.
patent: 6716758 (2004-04-01), Donohoe et al.
patent: 6827869 (2004-12-01), Podlesnik et al.
patent: 6897153 (2005-05-01), Kwean et al.
patent: 7053002 (2006-05-01), Cohen et al.
patent: 2004/0219790 (2004-11-01), Wilson
patent: 2006/0175292 (2006-08-01), Hanewald et al.
patent: 2007/0131652 (2007-06-01), Okune et al.
patent: 2008/0057724 (2008-03-01), Kiehlbauch et al.
patent: 2008/0286979 (2008-11-01), Shin et al.
patent: 0596593 (1994-05-01), None
patent: 03-222327 (1991-10-01), None
patent: 08064575 (1996-03-01), None
patent: 2000-223478 (2000-08-01), None
patent: 20020223478 (2000-08-01), None
patent: WO 2005/022623 (2005-03-01), None
“Fabrication of sub-0.1 mu contacts with 193 nm CARL photolithography by a combination of ICP dry development and MORI HDP oxide etch”; Proceedings-Electrochemical Society (2000'), 99-30 (Plasma Etching Processes for Sub-Quarter Micron Devices), pp. 226-232; Song et al.
Fuard, D., et al. “Etch mechanisms of low dielectric constant polymers in high density plasmas: . . . ”, J. Vac. Sci Technol. B 19(6), 2223-2230 (Nov./Dec. 2001).
Hwang, Gyeong S., et al. “Ion mass effect in plasma-induced charging”, Appl. Phys. Lett., 71 (14), 1942-1944 (Oct. 6, 1997).
Matsui, Jun, et al., “The effect of topographical local charging on the etching of deep-submicron structures in SiO2 . . . ”, Appl. Phys. Lett. 78 (7), 883-885 (Feb. 12, 2001).
Noda, Shuichi, et al., “Investigation of ion transportation in high-aspect-ratio holes from fluorocarbon plasma for SiO2 etching”, Thin Solid Films 374, 181-189 (2000).
Schaepkens, Marc, et al., “Asymmetric microtrenching during inductively coupled plasma oxide etching . . . ”, Appl. Phys. Lett., 72 (11) 1293-1295 (Mar. 16, 1998).
Ikegami, Naokatsu, et al., “[XP-000732360]Characteristics of Very High-Aspect Ration Contact Hole Etching”, Jpn. J. Appl. Phys., vol. 30, pp. 2470-2476 (1997).
International Search Report (6 pgs.).

Affiliated with

Also associated with

Rating

High aspect ratio contacts does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High aspect ratio contacts, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High aspect ratio contacts will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4083541