High aspect ratio contact structure with reduced silicon...

Details High aspect ratio contact structure with reduced silicon... High aspect ratio contact structure with reduced silicon...

2005-06-15

2008-07-22

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S682000, C257SE21165

Reexamination Certificate

active

07402512

ABSTRACT:
A high aspect ratio contact structure formed over a junction region in a silicon substrate comprises a titanium interspersed with titanium silicide layer that is deposited in the contact opening and directly contacts an upper surface of the substrate. Silicon-doping of CVD titanium, from the addition of SiH4during deposition, reduces consumption of substrate silicon during the subsequent silicidation reaction in which the titanium reacts with silicon to form a titanium silicide layer that provides low resistance electrical contacts between the junction region and the silicon substrate. The contact structure further comprises a titanium nitride contact fill that is deposited in the contact opening and fills substantially the entire contact opening.

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