HF gas etching of wafers in an acid processor

Details HF gas etching of wafers in an acid processor HF gas etching of wafers in an acid processor

1989-04-07

1990-02-13

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

134 3, 134 33, 156640, 156646, 156657, 156345, B44C 122, C03C 1500, C03C 2506

Patent

active

049003950

ABSTRACT:
Batch processing of semiconductor wafers utilizing a gas phase etching with anhydrous hydrogen fluoride gas flowing between wafers in a wafer carrier. The etching may take place in a bowl with the wafer carrier mounted on a rotor in the closed bowl. The etchant gas may include a small amount of water vapor, along with the anhydrous hydrogen fluoride gas, as may be needed to commence the etching process. The etching may take place with the wafers arranged in a stack in the wafer carrier and extending along or on the rotation axis.

REFERENCES:
patent: 3879597 (1975-04-01), Bersin et al.
patent: 3923568 (1975-12-01), Bersin
patent: 3961877 (1976-06-01), Johnson
patent: 3990462 (1976-11-01), Elftmann et al.
patent: 4230515 (1980-10-01), Zajac
patent: 4285800 (1981-08-01), Welty
patent: 4303467 (1981-12-01), Scornavacca et al.
patent: 4609575 (1976-09-01), Burkman
patent: 4682614 (1987-07-01), Silvernail et al.
patent: 4682615 (1987-07-01), Burkman
patent: 4691722 (1987-09-01), Silvernail et al.
patent: 4749440 (1988-07-01), Blackwood et al.
IBM Technical Disclosure Bulletin, vol. 19, No. 7, Dec., 1976 Etching of SiO.sub.2 in Gaseous HF/H.sub.2 O, Authors: K. D. Beyer and M. H. Whitehill.

Affiliated with

Also associated with

Rating

HF gas etching of wafers in an acid processor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with HF gas etching of wafers in an acid processor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and HF gas etching of wafers in an acid processor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1165549